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Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cm² V⁻¹ s⁻¹ via Microstructural Tuning

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http://hdl.handle.net/2183/29996
Attribution 4.0 International (CC BY 4.0)
Except where otherwise noted, this item's license is described as Attribution 4.0 International (CC BY 4.0)
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Title
Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cm² V⁻¹ s⁻¹ via Microstructural Tuning
Author(s)
Gutiérrez Fernández, Edgar
Scaccabarozzi, Alberto D.
Basu, Aniruddha
Solano, Eduardo
Anthopoulos, Thomas D.
Martín, Jaime
Date
2022-01-05
Citation
Gutierrez-Fernandez, E., Scaccabarozzi, A. D., Basu, A., Solano, E., Anthopoulos, T. D., Martín, J., Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cm² V⁻¹ s⁻¹ via Microstructural Tuning. Adv. Sci. 2022, 9, 2104977. https://doi.org/10.1002/advs.202104977
Abstract
[Abstract] There is a growing demand to attain organic materials with high electron mobility, μe, as current reliable reported values are significantly lower than those exhibited by their hole mobility counterparts. Here, it is shown that a well-known nonfullerene-acceptor commonly used in organic solar cells, that is, BTP-4F (aka Y6), enables solution-processed organic thin-film transistors (OTFT) with a μe as high as 2.4 cm² V⁻¹ s⁻¹. This value is comparable to those of state-of-the-art n-type OTFTs, opening up a plethora of new possibilities for this class of materials in the field of organic electronics. Such efficient charge transport is linked to a readily achievable highly ordered crystalline phase, whose peculiar structural properties are thoroughly discussed. This work proves that structurally ordered nonfullerene acceptors can exhibit intrinsically high mobility and introduces a new approach in the quest of high μe organic materials, as well as new guidelines for future materials design.
Keywords
Electron mobility
Nonfullerene acceptors
Organic thin-film transistors
Polymorphism
 
Description
Financiado para publicación en acceso aberto: Universidade da Coruña/CISUG
Editor version
https://doi.org/10.1002/advs.202104977
Rights
Attribution 4.0 International (CC BY 4.0)
ISSN
2198-3844

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