A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes

UDC.coleccionInvestigación
UDC.departamentoFísica e Ciencias da Terra
UDC.endPage3577
UDC.grupoInvGrupo de Polímeros
UDC.institutoCentroCITENI - Centro de Investigación en Tecnoloxías Navais e Industriais
UDC.issue7
UDC.journalTitleACS Energy Letters
UDC.startPage3567
UDC.volume9
dc.contributor.authorZapata-Arteaga, Osnat
dc.contributor.authorPerevedentsev, Aleksandr
dc.contributor.authorPrete, Michela
dc.contributor.authorBusato, Stephan
dc.contributor.authorFloris, Paolo Sebastiano
dc.contributor.authorAsatryan, Jesika
dc.contributor.authorRurali, Riccardo
dc.contributor.authorMartín, Jaime
dc.contributor.authorCampoy-Quiles, Mariano
dc.date.accessioned2025-12-10T13:27:10Z
dc.date.available2025-12-10T13:27:10Z
dc.date.issued2024-07-01
dc.description.abstract[Abstract]: Chemical doping of organic semiconductors is an essential enabler for applications in electronic and energy-conversion devices such as thermoelectrics. Here, Lewis-paired complexes are advanced as high-performance dopants that address all the principal drawbacks of conventional dopants in terms of limited electrical conductivity, thermal stability, and generality. The study focuses on the Lewis acid B(C6F5)3 (BCF) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) bearing Lewis-basic −CN groups. Due to its high electron affinity, BCF:F4TCNQ dopes an exceptionally wide range of organic semiconductors, over 20 of which are investigated. Complex activation and microstructure control lead to conductivities for poly(3-hexylthiophene) (P3HT) exceeding 300 and 900 S cm–1 for isotropic and chain-oriented films, respectively, resulting in a 10 to 50 times larger thermoelectric power factor compared to those obtained with neat dopants. Moreover, BCF:F4TCNQ-doped P3HT exhibits a 3-fold higher thermal dedoping activation energy compared to that obtained with neat dopants and at least a factor of 10 better operational stability.
dc.description.sponsorshipWe thank Martin Kreuzer for extensive support and fruitful discussions at the Alba synchrotron BL01-MIRAS beamline. Jiali Guo and Dr. Edgar Gutierrez are also thanked for their support with the Alba experiments. We also thank Prof. Walter Caseri and Dr Marco D’Elia (Department of Materials, ETH Zürich) for generously contributing samples of poly(phenylene methylene)s as well as the many stimulating discussions. Dr Agustín Mihi (ICMAB-CSIC) is thanked for providing access to the Bruker IR spectrophotometry equipment. This work was financially supported by the European Commission through the Marie Skłodowska-Curie project HORATES (GA- 955837), by the Spanish Ministry of Science and Innovation (MCIN/AEI/10.13039/501100011033) under grants PID2020-119777GB-I00, PID2021-128924OB-I00 and the Severo Ochoa Centres of Excellence Program under grant CEX2019-000917-S (particularly, PALOMA grant within ICMAB’s ‘Frontier Interdisciplinary Projects’ (FIP-2021) Program), and by the Generalitat de Catalunya under grant no. 2017 SGR 1506. The work of PSF has been carried out within the PhD program in Physics of the Universitat Autònoma de Barcelona (UAB). We thank the Centro de Supercomputación de Galicia (CESGA) for the use of their computational resources.
dc.description.sponsorshipGeneralitat de Catalunya; 2017-SGR-1506
dc.identifier.citationACS Energy Lett. 2024, 9, 3567−3577
dc.identifier.doihttps://doi.org/10.1021/acsenergylett.4c01278
dc.identifier.issn2380-8195
dc.identifier.urihttps://hdl.handle.net/2183/46629
dc.language.isoeng
dc.publisherACS
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/955837
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-119777GB-I00/ES/TRANSPORTE TERMICO EN MATERIALES 2D Y EN INTERFACES
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-128924OB-I00/ES/MEJORANDO LA EFICIENCIA DE CELDAS SOLARES POR EMPAREJADO ESPECTRAL Y AUMENTO DE LA MOVILIDAD DE CARGA
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-S/ES/
dc.relation.urihttps://doi.org/10.1021/acsenergylett.4c01278
dc.rightsAttribution 4.0 Internationalen
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleA Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes
dc.typejournal article
dc.type.hasVersionVoR
dspace.entity.typePublication
relation.isAuthorOfPublication6a835bf1-9470-4a16-b175-495bc20a12e2
relation.isAuthorOfPublication256e7a30-b3dd-4d95-81fc-c6a0996914eb
relation.isAuthorOfPublication.latestForDiscovery6a835bf1-9470-4a16-b175-495bc20a12e2

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Zapata_Arteaga_Osnat_2024_Universal-highly-stable-dopant-system-organic-semiconductors-based-Lewis-paired-dopant-complexes.pdf
Size:
5.22 MB
Format:
Adobe Portable Document Format